Effect of Passivation on the Electrical Properties of Au/Hg3In2Te6 Schottky Contact

The influence of H2O2 passivation on the schottky contact properties between Au and Hg3In2Te6 wafer was studied by current-voltage (I-V) measurement and X-ray photoelectron spectroscopy (XPS). The XPS results showed that the binding energy of Hg 4f shift toward higher energy direction for about 0.15 eV and the binding energy of O 1s decreased about 0.18 eV after H2O2 passivation. Moreover, Te(2-) changed into Te(0) and HgO formed on the surface of Hg3In2Te6 at the same time. Meanwhile, the Schottky barrier height of Au/Hg3In2Te6 contact varied from 0.42 eV to 0.38 eV, and the leak current reduced about 5.27 x 10(-4) A after H2O2 passivation which is confirmed by I-V measurement. It can be deduced that the passivated surface of MIT wafer decreased the number of dangling bonding, reduced the surface states and weakened the Fermi level pinning.