Effect of Post-Annealing on (Ca07Sr0.3)(Zr0.8Ti0.2)O3 Films on Pt and Cu Substrates Fabricated by Aerosol Deposition

We investigated the annealing effect of CSZT films on Pt and Cu substrates fabricated by aerosol deposition (AD) process. The fabricated films were annealed at 100, 250, and 500 degrees C, and all XRD patterns revealed CSZT phase with a perovskite structure, with the exception of the films on Cu substrates annealed at 250 and 500 degrees C, which presented a CuO secondary phase. The dielectric constant and the dielectric loss of the CSZT films on the Pt substrates were observed to increase slightly as the annealing temperature increased. However, the Cu substrates annealed at 250 degrees C presented lower values. The leakage current of films on the Pt substrate decreased as the annealing temperature increased. On the other hand, the films on a Cu substrate increased as the annealing temperature increased, and these results showed that the films on Cu substrates have inferior properties due to the presence of CuO.