Large-Scale Fabrication of Two Dimensional Electron Gas at the LaAlO3/SrTiO3 Interface

Recently, the discovery of a two-dimensional electron gas (2DEG) has brought about innovative applications in the area of nanoscale oxide devices. Currently, PLD (pulsed laser deposition) is the dominant deposition technique that is used to produce 2DEG. However, PLD is not a suitable growth technique for device applications because of its small deposition area. To demonstrate the capability to grow conductive interface with large-scale, we deposited the amorphous LAO layer on STO substrates within a 2 inch range by using off axis RF-sputtering method. This paper reports the deposition of conducting interface at LaAlO3/SrTiO3 heterointerface over 2-inch diameter. All samples exhibited conducting interface, however, the electrical and structural properties depend on the position of the deposition. While thinner film show higher conductivity, in terms of structural properties, the LAO/STO film deposited within the 1.35 inch range had the best surface among the samples.