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Updated: Mar 28, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Thermal Characteristics of Amorphous Indium-Gallium-Zinc-Oxide and Graphite in Display Panel Based Thin Film
Abstract:
One of the important design factors in the smart electronic industry is proper heat treatment of the display panel. In order to improve the heat transfer performance of display panels, we analyzed a three-dimensional model of multi-stack layers of the thin film transistors (TFTs). In particular, we numerically investigated the thermal barrier effects of active layers having different material properties of a-IGZO (isotropy) and graphite (anisotropy). We calculated the temperature distribution on the display panel with each active layer, using the commercial code, COMSOL Multiphysics. We graphically depict comparative results of the thermal characteristics between a-IGZO and graphite with the stacked structure of the TFTs.

