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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
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When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
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P-N junction01:11

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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ZnO gap engineering by doping with III-V compounds.

A N Andriotis1, M Menon

  • 1Institute of Electronic Structure and Laser, FORTH, 71110 Heraklio, Crete, Greece.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|January 7, 2016
PubMed
Summary
This summary is machine-generated.

Engineered zinc oxide (ZnO) with III-V materials shows reduced band gaps for efficient photoelectrochemical water splitting. This gap engineering approach offers promising applications in renewable energy technologies.

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Area of Science:

  • Materials Science
  • Computational Chemistry
  • Renewable Energy

Background:

  • Zinc oxide (ZnO) is a semiconductor with potential applications in photocatalysis.
  • Tuning the electronic band structure of ZnO is crucial for enhancing its performance in applications like water splitting.

Purpose of the Study:

  • To investigate the effect of codoping ZnO with III-V materials on its energy band gap.
  • To explore the potential of these engineered materials for photoelectrochemical water splitting.

Main Methods:

  • Utilized theoretical modeling and ab initio calculations.
  • Studied codoped materials of the form (ZnO)1-x(III-V)x, where (III-V) represents GaN, AlN, AlP, BN, or BP.

Main Results:

  • Codoping significantly reduces the energy band gap of ZnO as dopant concentration (x) increases.
  • Even at low dopant concentrations, the band gaps of (ZnO)1-x(III-V)x materials are substantially smaller than that of pure ZnO.
  • The studied materials exhibit tunable band gaps suitable for solar energy applications.

Conclusions:

  • Gap engineering of ZnO via III-V codoping effectively narrows the band gap.
  • The (ZnO)1-x(III-V)x materials are promising candidates for efficient photoelectrochemical water splitting.
  • Theoretical insights provide a pathway for designing advanced photocatalysts.