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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

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Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

Chen Wei Shih1, Albert Chin1, Chun Fu Lu2

  • 1Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.

Scientific Reports
|January 9, 2016
PubMed

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