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Updated: Mar 27, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Yuewen Sheng1, Wenshuo Xu1, Xiaochen Wang1
1Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK. Jamie.warner@materials.ox.ac.uk.
We developed a novel non-aqueous method to create vertical heterostructures using strained monolayer tungsten disulfide (WS2) and other 2D materials. This technique enables large-area fabrication with precise layer control for advanced electronic and optoelectronic applications.
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