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Mixed multilayered vertical heterostructures utilizing strained monolayer WS2.

Yuewen Sheng1, Wenshuo Xu1, Xiaochen Wang1

  • 1Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK. Jamie.warner@materials.ox.ac.uk.

Nanoscale
|January 14, 2016
PubMed
Summary
This summary is machine-generated.

We developed a novel non-aqueous method to create vertical heterostructures using strained monolayer tungsten disulfide (WS2) and other 2D materials. This technique enables large-area fabrication with precise layer control for advanced electronic and optoelectronic applications.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Vertical heterostructures of 2D materials exhibit tunable electronic and optoelectronic properties.
  • Strain in monolayer tungsten disulfide (WS2), often induced by substrates during chemical vapor deposition (CVD), significantly alters its band structure and properties.
  • Existing aqueous transfer methods are challenging for WS2 grown on SiO2/Si substrates due to water solubility.

Purpose of the Study:

  • To demonstrate a non-aqueous transfer method for fabricating vertical heterostructures incorporating strained monolayer WS2.
  • To enable large-area fabrication of these heterostructures with atomic-level control over layer stacking.
  • To preserve the unique properties of WS2, such as strong photoluminescence, within the heterostructure.

Main Methods:

  • Utilizing chemical vapor deposition (CVD) to grow large-area 2D materials including WS2, graphene, and hexagonal boron nitride (h-BN).
  • Developing and applying a non-aqueous liquid transfer technique to stack these 2D materials, avoiding water-based processes.
  • Employing hexagonal boron nitride (h-BN) as an insulating interlayer to prevent detrimental interactions between WS2 and graphene.

Main Results:

  • Successfully created vertical heterostructures comprising strained WS2, h-BN, and graphene using the non-aqueous transfer method.
  • Demonstrated the ability to achieve layer-by-layer control in the vertical stacking of CVD-grown 2D materials.
  • Preserved the strong photoluminescence of the WS2 monolayer within the heterostructure, indicating minimal degradation.

Conclusions:

  • The developed non-aqueous transfer method is effective for fabricating large-area vertical heterostructures with precise thickness control.
  • This technique overcomes limitations of aqueous methods for WS2 grown on common substrates.
  • It opens new avenues for the scalable manufacturing of advanced 2D material-based electronic and optoelectronic devices.