Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Silica Gel Column Chromatography: Overview

Silica Gel Column Chromatography: Overview

Silica gel column chromatography is a technique for separating compounds using a column packed with silica gel as the stationary phase. This method relies on differences in the polarity of compounds. Based on their polarities, compounds move between the stationary phase (silica gel) and the mobile phase (the solvent), forming discrete bands in the column.
Polar components tend to bind strongly to the silica gel, causing them to move slowly through the column. In contrast, nonpolar compounds...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Integrated Analysis of DNA Methylation and Transcriptomic Dynamics in the Grape Variety 'Cabernet Franc' at Early and Late Stages of Fruit Development.

Plants (Basel, Switzerland)·2026

Same author

Machine Learning-Based Approach for Rapid Prediction and Analysis of Gas-Sensing Properties of Janus Materials.

Langmuir : the ACS journal of surfaces and colloids·2025

Same author

A Soft Actuator with Simultaneous Ultra-High Actuation Strain and Power Density Under Human-Safe Stimuli.

Advanced materials (Deerfield Beach, Fla.)·2025

Same author

Study on the superior gas adsorption and sensing properties of M<sub>2</sub>Nb<sub>2</sub>C<sub>3</sub> (M = Mo, V, and Cr) MXene based sensors in the detection of NO and NO<sub>2</sub> molecules.

Physical chemistry chemical physics : PCCP·2025

Same author

LCST-phase-separated porous liquid metal-filled hydrogel actuators with fast electro-response, enhanced strength, and low electric field.

Materials horizons·2025

Same author

Optimisation of wastewater surveillance for COVID-19 after resumption of normalcy from the pandemic: A case of Hong Kong.

Epidemics·2025

Search research articles

Related Experiment Video

Updated: Mar 27, 2026

Fabrication of Silica Ultra High Quality Factor Microresonators

Fabrication of Silica Ultra High Quality Factor Microresonators

Published on: July 2, 2012

Nearly perfect valley filter in silicene.

Qingtian Zhang¹, K S Chan, Mengqiu Long

¹Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China.

Journal of Physics. Condensed Matter : an Institute of Physics Journal

|January 14, 2016

Summary

Researchers theoretically demonstrate a perfect valley filter in silicene using a combination of a ferromagnetic stripe and an electric field. This novel approach is crucial for advancing valleytronic devices.

More Related Videos

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

Related Experiment Videos

Last Updated: Mar 27, 2026

Fabrication of Silica Ultra High Quality Factor Microresonators

Fabrication of Silica Ultra High Quality Factor Microresonators

Published on: July 2, 2012

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Silicene, a silicon analogue of graphene, exhibits unique electronic properties.
Valley polarization is a key concept in valleytronics, aiming to utilize electron valleys for information processing.
Existing methods for valley polarization in silicene are limited.

Purpose of the Study:

To theoretically demonstrate a method for achieving a perfect valley filter in silicene.
To explore the combined effects of ferromagnetic stripes and electric fields on valley polarization.
To propose a device for practical applications in valleytronics.

Main Methods:

Theoretical modeling of silicene under external fields.
Investigating the influence of ferromagnetic stripe magnetization (perpendicular and parallel to the plane).
Analyzing the impact of perpendicular electric fields on valley polarization.

Main Results:

Neither a ferromagnetic stripe nor an electric field alone can induce valley polarization in silicene.
A combination of a ferromagnetic stripe and a perpendicular electric field creates a perfect valley filter.
Two configurations of ferromagnetic stripe magnetization were theoretically analyzed.

Conclusions:

The proposed device effectively acts as a valley beam filter.
This theoretical demonstration is a significant step towards realizing practical valleytronic devices.
The synergistic effect of magnetic and electric fields is key to achieving perfect valley filtering in silicene.