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Updated: Mar 27, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Ballistic Transport Exceeding 28 μm in CVD Grown Graphene
Luca Banszerus1, Michael Schmitz1, Stephan Engels1,2
1JARA-FIT and 2nd Institute of Physics, RWTH Aachen University , 52074 Aachen, Germany.
Abstract:
We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm(2)/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature-dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.
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