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Facet-Mediated Growth of High-Quality Monolayer Graphene on Arbitrarily Rough Copper Surfaces
Hyo Chan Lee1, Sae Byeok Jo1, Eunho Lee1
1Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, South Korea.
Advanced Materials (Deerfield Beach, Fla.)
|January 15, 2016
Abstract:
A synthetic approach for high-quality graphene on rough Cu surfaces via chemical vapor deposition is proposed. High-quality graphene is synthesized on rough Cu surfaces by inducing surface faceting of Cu surfaces prior to graphene growth. The electron mobility of synthesized graphene on the rough Cu surfaces is enhanced to 10 335 cm(2) V(-1) s(-1).
