Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)

Area of Science:

• Semiconductor physics
• Optoelectronics
• Infrared laser technology

Background:

• Mid-infrared (2-3 µm) vertical cavity surface emitting lasers (VCSELs) based on GaInAsSb/GaSb quantum wells are vital for cost-effective gas monitoring.
• Understanding device efficiency and temperature sensitivity is critical for stable operation.

Purpose of the Study:

• To investigate the efficiency and temperature sensitivity of 2.6 µm emitting VCSELs.
• To identify key factors influencing temperature-stable operation.
• To provide design considerations for improved mid-infrared VCSEL performance.

Main Methods:

• Analysis of threshold current and device performance at room temperature.
• Investigation of non-radiative Auger recombination mechanisms.
• Evaluation of the combined effects of recombination and gain peak-cavity mode detuning on temperature sensitivity.

Main Results:

• Non-radiative Auger recombination is the dominant factor limiting threshold current and room-temperature performance.
• The interplay between non-radiative recombination and gain peak-cavity mode detuning dictates overall VCSEL temperature sensitivity.
• Increased gain peak-cavity mode detuning is essential for achieving temperature-stable operation around room temperature.

Conclusions:

• Mitigating temperature sensitivity in mid-infrared VCSELs necessitates managing non-radiative recombination.
• Larger gain peak-cavity mode detuning can effectively counteract the detrimental effects of increasing non-radiative recombination with temperature.
• Future mid-infrared VCSEL designs must incorporate these findings for enhanced thermal stability.