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Updated: Mar 26, 2026

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers
Published on: February 8, 2022
Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical
Bing Jiang1, Meicheng Li2, Yu Liang1
1State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China. mcli@ncepu.edu.cn jluo@alum.mit.edu.
Abstract:
The etching anisotropy induced by the morphology and rotation of silver particles controls the morphology of silicon nanoporous structures, through various underlying complex etching mechanisms. The level of etching anisotropy can be modulated by controlling the morphology of the silver catalyst to obtain silicon nanoporous structures with straight pores, cone-shaped pores and pyramid-shaped pores. In addition, the structures with helical pores are obtained by taking advantage of the special anisotropic etching, which is induced by the rotation and revolution of silver particles during the etching process. An investigation of the etching anisotropy during metal assisted chemical etching will promote a deep understanding of the chemical etching mechanism of silicon, and provide a feasible approach to fabricate Si nanoporous structures with special morphologies.
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