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Biasing of Metal-Semiconductor Junctions01:27

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions.

Chih-Hsien Cheng1, An-Jye Tzou2,3, Jung-Hung Chang1

  • 1Graduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University (NTU), No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan R.O.C.

Scientific Reports
|January 23, 2016
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Summary
This summary is machine-generated.

High-power gallium nitride (GaN) light-emitting diodes (LEDs) were epitaxially grown on amorphous silicon carbide (a-SixC(1-x)) buffers. Carbon-rich buffers improved GaN epitaxy, reducing defects and enhancing LED performance.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Gallium nitride (GaN) based light-emitting diodes (LEDs) are crucial for high-power lighting applications.
  • Achieving high-quality GaN epitaxy on cost-effective substrates remains a challenge.
  • Amorphous silicon carbide (a-SixC(1-x)) buffers offer a potential solution for GaN epitaxy on silicon.

Purpose of the Study:

  • To demonstrate the epitaxy of high-power GaN LEDs on amorphous silicon carbide (a-SixC(1-x)) buffer layers.
  • To investigate the effect of a-SixC(1-x) buffer composition on GaN epitaxy and LED performance.
  • To understand the relationship between interfacial defects, strain relaxation, and device characteristics.

Main Methods:

  • Synthesis of a-SixC(1-x) buffers with varying C/Si ratios on SiO2/Si substrates using low-temperature plasma-enhanced chemical vapor deposition (PECVD).
  • Epitaxial growth of GaN on the synthesized a-SixC(1-x) buffers.
  • Characterization of GaN LEDs using electroluminescence (EL) and capacitance-voltage (C-V) measurements.

Main Results:

  • GaN LEDs grown on C-rich a-SixC(1-x) buffers exhibited superior performance compared to those on Si-rich buffers.
  • Increasing Si content in the a-SixC(1-x) buffer led to decreased EL power and increased interfacial defects.
  • C-rich buffers facilitated strain relaxation, suppressed Auger recombination, and reduced interfacial defect density.
  • Optimized GaN LEDs achieved a lower turn-on voltage (2.48 V), higher output power (106 mW), external quantum efficiency (42.3%), and reduced efficiency droop (7%).
  • EL peak wavelength shifted from 446 nm to 450 nm with a transition from Si-rich to C-rich buffers.

Conclusions:

  • The composition of amorphous silicon carbide (a-SixC(1-x)) buffer layers significantly impacts GaN epitaxy and LED performance.
  • C-rich a-SixC(1-x) buffers are advantageous for high-power GaN LED fabrication due to improved strain relaxation and reduced defects.
  • This approach offers a promising pathway for developing high-performance, cost-effective GaN-based optoelectronic devices.