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Updated: Mar 26, 2026

Fabrication of Spatially Confined Complex Oxides
Published on: July 1, 2013
Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
Doohee Cho1,2, Sangmo Cheon1,2, Ki-Seok Kim2
1Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang 790-784, Korea.
Abstract:
The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.
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