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Strain engineering of graphene: a review
Chen Si1, Zhimei Sun1, Feng Liu2
1School of Materials Science and Engineering, and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China.
Nanoscale
|January 23, 2016
Summary
Strain engineering in graphene, a 2D material, allows tuning its properties for novel applications. This review covers strain effects on electronic structure, Raman spectra, and potential uses in straintronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene is a unique 2D material with exceptional strength and elasticity.
- Its ability to sustain large elastic strain (>20%) enables property tuning.
- This has led to the emergence of the field of graphene straintronics.
Purpose of the Study:
- To review the current progress in strain engineering of graphene.
- To summarize the effects of strain on graphene's electronic structure and Raman spectra.
- To highlight advancements in graphene straintronics and its applications.
Main Methods:
- Review of existing literature on graphene strain engineering.
- Analysis of strain effects on electronic band structure.
- Investigation of strain-induced changes in Raman spectra.
- Discussion of electron-phonon coupling and pseudomagnetic field effects.
Main Results:
- Strain significantly modifies graphene's electronic structure and Raman spectra.
- Biaxial strain enhances electron-phonon coupling.
- Non-uniform strain induces strong pseudomagnetic fields.
- Strain engineering shows potential for self-assembly of foreign atoms on graphene.
Conclusions:
- Graphene straintronics is a rapidly advancing field with significant potential.
- Strain engineering offers a powerful method to control graphene's properties.
- Further research is expected to yield novel applications in electronics and materials science.
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