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Line Shape Analysis of Dynamic NMR Spectra for Characterizing Coordination Sphere Rearrangements at a Chiral Rhenium Polyhydride Complex
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Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations.

Lewis Hart1, Sara Dale1, Sarah Hoye1

  • 1Department of Physics, University of Bath , Bath BA2 7AY, United Kingdom.

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|January 23, 2016
PubMed
Summary

Rhenium and technetium disulfides and diselenides, similar to transition metal dichalcogenides (TMDs), exhibit unique low symmetry. Polarized Raman microscopy effectively distinguishes their distinct layer orientations for advanced material characterization.

Keywords:
MoS2Raman spectroscopyReS2ReSe2asymmetryphononrhenium diseleniderhenium disulfidetransition metal dichalcogenide

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Rhenium and technetium diselenides and disulfides are van der Waals layered semiconductors.
  • These materials share similarities with transition metal dichalcogenides (TMDs) but possess lower symmetry.
  • Their crystal structure includes only an inversion center, leading to unique layer orientations.

Purpose of the Study:

  • To investigate the consequences of lower symmetry in rhenium and technetium disulfides and diselenides.
  • To explore the potential for new domain structures in large-area layer growth.
  • To establish a method for distinguishing between 'up' and 'down' layer orientations.

Main Methods:

  • Production of few-layer ReS2 and ReSe2 samples using micromechanical cleavage.
  • Utilizing polarized Raman microscopy to analyze the samples.
  • Characterizing the controlled 'up' or 'down' orientations of the layers.

Main Results:

  • Demonstrated that layer orientation (up or down) can be controlled during sample preparation.
  • Showcased polarized Raman microscopy as a viable technique for differentiating these orientations.
  • Confirmed that the lower symmetry leads to symmetrically nonequivalent layer placements on substrates.

Conclusions:

  • Polarized Raman microscopy is an essential tool for characterizing large-area layers of these materials.
  • The unique symmetry properties offer new possibilities for anisotropic property exploitation in heterostructures.
  • Understanding layer orientation is crucial for controlling domain structures in synthesis.