Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.3K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.3K
Semiconductors01:22

Semiconductors

1.9K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.9K
Types of Semiconductors01:20

Types of Semiconductors

1.8K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.8K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

804
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
804
Fermi Level Dynamics01:12

Fermi Level Dynamics

966
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
966
SN2 Reaction: Transition State02:26

SN2 Reaction: Transition State

13.0K
An SN2 reaction of an alkyl halide is a single-step process in which bond formation between the nucleophile and the substrate and bond breaking between the substrate and the halide occurs simultaneously through a transition state without forming an intermediate.
When the nucleophile approaches the electrophilic carbon with its lone pairs, the halide acts as a leaving group and moves away with the electron-pair bonded to the carbon. Dotted partial bonds represent the bonds being formed or broken...
13.0K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Caspase-3 activation is a brake in GSDMD-mediated pyroptosis.

Cellular signalling·2026
Same author

Overcoming chemoresistance in esophageal cancer with synergistic strategies.

Frontiers in immunology·2026
Same author

Pressure-Induced Electronic Topological Transition and Superconducting Transition in Two-Dimensional Topological Insulator GeBi<sub>2</sub>Te<sub>4</sub>.

Inorganic chemistry·2026
Same author

Phosphorylation at Ser182 and Thr186 blocks GSDMD pyroptotic activity.

Cellular signalling·2026
Same author

Delayed cerebral abscess caused by <i>Scedosporium apiospermum</i> following fecal pit near-drowning.

Medical mycology case reports·2026
Same author

Apoptotic-mimetic nanovesicles orchestrate immune-vascular-osteogenic crosstalk for critical-sized craniofacial bone regeneration.

Materials today. Bio·2026

Related Experiment Video

Updated: Mar 26, 2026

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
11:21

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

8.6K

Pressure-driven semiconducting-semimetallic transition in SnSe.

Jiejuan Yan1, Feng Ke2, Cailong Liu1

  • 1State Key Lab for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China. cc060109@qq.com hanyh@jlu.edu.cn.

Physical Chemistry Chemical Physics : PCCP
|January 27, 2016
PubMed
Summary

Under high pressure, tin selenide (SnSe) transitions from a semiconductor to a semimetal, altering its electrical properties. This electronic shift is linked to structural changes and orbital coupling, potentially enhancing thermoelectric applications.

More Related Videos

Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials
09:23

Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials

Published on: May 17, 2024

2.2K
Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
04:09

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics

Published on: August 30, 2024

864

Related Experiment Videos

Last Updated: Mar 26, 2026

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
11:21

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

8.6K
Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials
09:23

Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials

Published on: May 17, 2024

2.2K
Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
04:09

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics

Published on: August 30, 2024

864

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Solid-State Chemistry

Background:

  • Tin selenide (SnSe) is a material with potential thermoelectric applications.
  • Understanding its behavior under pressure is crucial for optimizing its properties.

Purpose of the Study:

  • To investigate the pressure-dependent electrical transport and structural properties of SnSe.
  • To elucidate the mechanisms behind the observed electronic and structural transitions.

Main Methods:

  • Experimental measurements of electrical transport properties (including Hall effect) under varying pressure.
  • X-ray diffraction for structural analysis.
  • First-principles band structure calculations.

Main Results:

  • An electronic transition from semiconducting to semimetallic state observed at 12.6 GPa.
  • An accompanying orthorhombic to monoclinic structural transition.
  • Abnormal variations in carrier concentration and mobility during the semimetallic transition.
  • Calculations confirmed the transition and attributed it to enhanced orbital coupling (Sn-5s, Sn-5p, Se-3p) under compression, leading to band broadening and band gap closure.

Conclusions:

  • Pressure induces significant electronic and structural transformations in SnSe.
  • The observed transitions are driven by changes in electronic orbital interactions under compression.
  • Tuning these pressure-modulated properties may offer a pathway to enhance SnSe's thermoelectric performance.