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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Updated: Mar 26, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Atomic-layer soft plasma etching of MoS2.

Shaoqing Xiao¹, Peng Xiao¹, Xuecheng Zhang¹

¹Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China.

Scientific Reports

|January 28, 2016

Summary

Researchers developed a precise atomic-layer etching method for molybdenum disulfide (MoS2) using SF6 + N2 plasma. This technique enables controlled thinning of 2D MoS2 materials for advanced applications.

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Area of Science:

Materials Science
Nanotechnology
Surface Chemistry

Background:

Two-dimensional (2D) molybdenum disulfide (MoS2) exhibits unique properties at monolayer and sub-monolayer thicknesses.
Precise thinning of bulk MoS2 to these critical thicknesses without damaging layers is a significant challenge.

Purpose of the Study:

To develop a soft, selective, and high-throughput method for atomic-layer-precision etching of MoS2.
To enable controlled thinning of MoS2 for diverse 2D material applications.

Main Methods:

Utilized SF6 + N2 plasmas with low-energy electrons (<0.4 eV).
Employed a technique minimizing ion-bombardment damage during etching.
Achieved uniform layer removal across MoS2 domains of varying initial thickness.

Main Results:

Demonstrated atomic-layer-precision etching of MoS2 without damaging the SiO2 substrate or remaining MoS2 layers.
Showcased tunable etching rates for complete removal or achieving specific layer numbers, including monolayer MoS2.
Presented layer-dependent vibrational and photoluminescence spectra of etched MoS2 samples.

Conclusions:

The developed soft plasma etching technique is versatile, scalable, and compatible with semiconductor manufacturing.
This method offers a promising approach for fabricating 2D MoS2 devices and can be extended to other 2D materials.