Related Experiment Video
Updated: Mar 26, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Layer-by-layer thinning of two-dimensional MoS2 films by using a focused ion beam
Ding Wang1, Yuqiu Wang1, Xiaodong Chen1
1College of Materials Science and Engineering, University of Shanghai for Science & Technology, Shanghai, 200093, People's Republic of China. xianyingwang@usst.edu.cn zhuyuankun@usst.edu.cn.
Abstract:
A layer-controlled two-dimensional (2D) molybdenum disulfide (MoS2) film with tunable bandgaps is highly desired for the fabrication of electronic/photoelectronic devices. In this work, we demonstrate that a focused ion beam (FIB) can be applied to thin MoS2 films layer-by-layer. The layer number can be controlled by simply changing the Ga(+) beam exposure time and the thinning speed is about half a layer per second. OM, AFM, PL and Raman spectra were used to monitor the change of layer numbers and characterize the morphology, thickness, and homogeneity of MoS2 films. The FIB layer-by-layer thinning technology will establish a new methodology for rationally thinning all kinds of 2D layered materials.
More Related Videos
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
11:24Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025