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Germanium-tin (GeSn) semiconductor diodes show low energy barriers, hindering light emission. Silicon-germanium-tin (SiGeSn) barriers are proposed for efficient carrier confinement in novel light-emitting devices.

Area of Science:

Materials Science
Semiconductor Physics
Optoelectronics

Background:

Exploring direct bandgap Germanium-Tin (GeSn) alloys for optoelectronic applications.
Assessing the suitability of Germanium (Ge) as barrier material in GeSn-based heterostructures.

Purpose of the Study:

To evaluate Ge/GeSn heterostructures for light-emitting diode (LED) applications.
To investigate alternative barrier materials for improved carrier confinement in GeSn active layers.

Main Methods:

Chemical Vapor Deposition (CVD) growth of GeSn/Ge p-i-n heterostructures.
Electro-optical characterization including electroluminescence measurements.
Theoretical calculations using effective mass and 6-band k·p methods.

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Main Results:

Ge barriers exhibit insufficient electron confinement (approx. 40 meV) in GeSn wells at room temperature.
Theoretical calculations confirm low band offsets for Ge/GeSn interfaces.
SiGeSn barrier material demonstrates appropriate band alignment for efficient electron and hole confinement.

Conclusions:

Ge is unsuitable as a barrier material for efficient GeSn-based light-emitting devices.
SiGeSn offers a promising alternative for creating effective confinement in GeSn quantum wells.
Successful epitaxial growth of a complete SiGeSn/GeSn/SiGeSn double heterostructure with doping is demonstrated.