Hybrid magnetoresistance in Pt-based multilayers: Effect originated from strong interfacial spin-orbit coupling
Kangkang Meng1, Jiaxing Xiao2, Yong Wu1
1School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
Scientific Reports
|February 5, 2016
Summary
Investigating hybrid magnetoresistance in Pt/CoFe/Pt and MnGa/Pt multilayers reveals complex interfacial spin-orbit coupling effects. These findings advance understanding of spin Hall magnetoresistance and anisotropic magnetoresistance in advanced magnetic materials.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Magnetoresistance (MR) phenomena are crucial for spintronic devices.
- Understanding interfacial effects in magnetic multilayers is key to controlling MR behavior.
- Spin-orbit coupling (SOC) significantly influences electronic and magnetic properties at interfaces.
Purpose of the Study:
- To investigate the hybrid magnetoresistance (MR) behaviors in Pt/Co90Fe10/Pt, Mn1.5Ga/Pt, and Mn1.5Ga/Pt/Co90Fe10/Pt multilayers.
- To elucidate the contributions of spin Hall MR (SMR) and anisotropic MR (AMR) in these systems.
- To explore the role of strong interfacial SOC and domain wall scattering.
Main Methods:
- Fabrication and characterization of Pt/Co90Fe10/Pt, Mn1.5Ga/Pt, and Mn1.5Ga/Pt/Co90Fe10/Pt multilayer structures.
- Measurement of planar Hall effect (PHE) and angle-dependent MR.
- Analysis of MR contributions from SMR, AMR, and interfacial effects.
Main Results:
- Pt/Co90Fe10/Pt multilayers exhibit a combination of SMR and AMR, attributed to strong interfacial SOC.
- The presence of perpendicular magnetic anisotropy (PMA) Mn1.5Ga modifies the effective anomalous Hall effect due to strong interfacial SOC.
- MR in Mn1.5Ga/Pt/Co90Fe10/Pt results from a complex interplay of domain wall scattering and interfacial SOC.
Conclusions:
- Interfacial spin-orbit coupling plays a dominant role in hybrid magnetoresistance phenomena in these multilayers.
- The interplay between different MR mechanisms and interfacial effects offers pathways for novel spintronic device functionalities.
- Further research into multilayer engineering can optimize MR properties for advanced applications.
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