Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Small-Signal Analysis of MOSFET Amplifiers

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...

Modeling of Diode Forward Characteristics

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...

Small-signal Diode Model

Small-signal Diode Model

In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Optimizing multiprocessor performance in real-time systems using an innovative genetic algorithm approach.

Scientific reports·2025

Same author

Guest editorial: Introduction to the special issue on selected papers from the ICM'2021 conference.

Analog integrated circuits and signal processing·2023

Same author

Early Diagnosis of COVID-19 Images Using Optimal CNN Hyperparameters.

Diagnostics (Basel, Switzerland)·2023

Same author

Plant Tissue Modelling Using Power-Law Filters.

Sensors (Basel, Switzerland)·2022

Same author

Plant stem tissue modeling and parameter identification using metaheuristic optimization algorithms.

Scientific reports·2022

Same author

A study of the nonlinear dynamics of human behavior and its digital hardware implementation.

Journal of advanced research·2020

Search research articles

Related Experiment Video

Updated: Mar 26, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Accurate dynamic power estimation for CMOS combinational logic circuits with real gate delay model.

Omnia S Fadl¹, Mohamed F Abu-Elyazeed¹, Mohamed B Abdelhalim²

¹Electronics and Communications Department, Faculty of Engineering, Cairo University, University Street, P.O. Box 268, Giza 12316, Egypt.

Journal of Advanced Research

|February 5, 2016

Summary

This study introduces a fast, deterministic method for estimating dynamic power consumption in CMOS circuits. The technique significantly reduces processing time compared to traditional simulation methods.

Keywords:

CMOS combinational logic circuits Dynamic power estimation Logic pictures Real-delay model Switching activity Toggle rate

More Related Videos

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

Related Experiment Videos

Last Updated: Mar 26, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

Area of Science:

Electrical Engineering
Computer Engineering

Background:

Dynamic power estimation is crucial for VLSI circuit design.
Node toggle rate is a key parameter influencing circuit operation and power consumption.

Purpose of the Study:

To present a deterministic and rapid method for estimating dynamic power in CMOS combinational logic circuits.
To utilize the Logic Pictures concept for accurate toggle rate determination.

Main Methods:

Employing gate-level circuit descriptions.
Implementing a real-delay model for logic gates.
Leveraging the Logic Pictures concept to calculate node toggle rates.

Main Results:

The proposed method provides accurate dynamic power estimations.
Validation against exhaustive and Monte Carlo simulations confirms the technique's efficacy.
Achieved up to 96% reduction in processing time compared to exhaustive simulation.

Conclusions:

The developed method offers a significant speed-up for dynamic power estimation in VLSI design.
This approach enhances the efficiency of designing CMOS combinational logic circuits.