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The origin of grain boundary capacitance in highly doped ceria
Eduardo Caetano C Souza1, John B Goodenough2
1Instituto de Química, Universidade de São Paulo, 05508-000, SP, Brazil. eccsouza@iq.usp.br.
Abstract:
The origin of a grain-boundary capacitance in mixed oxide-ion/electronic conductors has been investigated for the case of Ce0.8Sm0.2O1.9-δ using a.c. impedance spectroscopy under low pO2 from 250 to 400 °C. The observed capacitance is interpreted in terms of Ce(III):4f(1) electrons first introduced into the grains and not into the grain boundaries.
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