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Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization
Tao Tao1,2, Ting Zhi1,2, Bin Liu1,2
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China.
Abstract:
The photoelectrodes based on III-nitride semiconductors with high energy conversion efficiency especially for those self-driven ones are greatly desirable for hydrogen generation. In this study, highly ordered InGaN/GaN multiple-quantum-well nanorod-based photoelectrodes have been fabricated by a soft UV-curing nano-imprint lithography and a top-down etching technique, which improve the incident photon conversion efficiency (IPCE) from 16% (planar structure) to 42% (@ wavelength = 400 nm). More significantly, the turn-on voltage is reduced low to -0.6 V, which indicates the possibility of achieving self-driven. Furthermore, SiO2/Si3N4 dielectric distributed Bragg reflectors are employed to further improve the IPCE up to 60%. And the photocurrent (@ 1.1 V) is enhanced from 0.37 mA/cm(2) (original planar structure) to 1.5 mA/cm(2). These improvements may accelerate the possible applications for hydrogen generation with high energy-efficiency.
