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Updated: Mar 26, 2026

Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser
Published on: June 28, 2018
Analysis of X-ray absorption spectra of the K and L2,3 edges of GaN within the FP-LAPW method
Gabriela B Grad1, Edgardo V Bonzi1
1FaMAF, Universidad Nacional de Córdoba, Córdoba, Argentina.
Abstract:
Gallium nitride, GaN, is a semiconductor material with several technological applications. In this work we obtain ab initio XANES spectra using FP-LAPW method within the DFT formalism using different potentials (LDA, PBE and TB-mBJ) in order to study the electronic properties of the system. The spectra calculated using the effect of the fractional core hole were compared with experimental data obtaining a very good agreement.
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