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Updated: Mar 26, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
1HEDPS, Center for Applied Physics and Technology, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing, 100871, People's Republic of China.
Molecular mechanics simulations reveal that the four-point bending method accurately determines single-layer molybdenum disulfide (SLMoS2) bending stiffness. Different simulation methods converge on similar results for larger curvature radii, indicating isotropic bending behavior.
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