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Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

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Related Experiment Video

Updated: Mar 25, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Flexible terahertz modulator based on coplanar-gate graphene field-effect transistor structure.

Jingbo Liu, Pingjian Li, Yuanfu Chen

|February 13, 2016

Summary

Researchers developed a flexible terahertz (THz) modulator using graphene and ion-gel on PET. This device offers tunable THz transmittance with high flexibility and low insertion loss for advanced THz systems.

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Last Updated: Mar 25, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Published on: July 24, 2015

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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

Area of Science:

Materials Science
Optoelectronics
Condensed Matter Physics

Background:

Terahertz (THz) modulators are crucial for THz systems but flexible options are limited by material constraints.
Developing flexible THz modulating materials is essential for next-generation THz technologies.

Purpose of the Study:

To demonstrate the feasibility of flexible THz modulators using a novel material combination.
To investigate the performance characteristics of a graphene-based flexible THz modulator.

Main Methods:

Fabrication of a coplanar-gate field-effect transistor (FET) structure using ion-gel/graphene/polyethylene terephthalate (PET).
Electrical gating to tune carrier concentration in graphene and control THz transmittance.
Bending tests to evaluate modulation property stability under deformation.

Main Results:

Achieved THz modulation depth up to 22% by electrically tuning graphene's carrier concentration.
Demonstrated superior flexibility, maintaining modulation properties after 1000 bending cycles.
Reported low insertion loss of 1.2 dB due to the unique ion-gel/graphene/PET structure.

Conclusions:

The ion-gel/graphene/PET structure enables the first demonstration of a flexible THz modulator.
This flexible THz graphene modulator exhibits excellent performance, including tunable modulation, high flexibility, and low insertion loss.
The developed modulator holds promise for applications in compact THz systems and new flexible THz technologies.