Ultraviolet/visible photodetectors with ultrafast, high photosensitivity based on 1D ZnS/CdS heterostructures
Zheng Lou1, Ludong Li1, Guozhen Shen1
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. gzshen@semi.ac.cn.
Abstract:
One-dimensional (1D) semiconducting heterostructures have been widely studied for optoelectronics applications because of their unique geometry and attractive physical properties. In this study, we successfully synthesized 1D ZnS/CdS heterostructures, which can be used to fabricate high performance ultraviolet/visible photodetectors. Due to the separation of photo-generated electron-hole pairs, the resultant photodetector showed excellent photoresponse properties, including ultrahigh Ion/Ioff ratios (up to 10(5)) and specific detectivity (2.23 × 10(14) Jones), relatively fast response speed (5 ms), good stability and reproducibility. Moreover, the as-fabricated flexible photodetectors showed great mechanical stability under different bending conditions. Our results revealed the possibility of 1D ZnS/CdS heterostructures for application in the detection of UV and visible light. The main advantages of the heterostructures have great potential application for future optoelectronic devices.
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