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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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MOSFET01:16

MOSFET

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
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P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Types of Semiconductors01:20

Types of Semiconductors

1.8K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.8K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

Zhenwei Wang1, Pradipta K Nayak1, Jesus A Caraveo-Frescas1

  • 1Materials Science & Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.

Advanced Materials (Deerfield Beach, Fla.)
|February 17, 2016
PubMed
Summary

Transparent p-type oxide semiconductors are crucial for advanced electronics, but still lag behind n-type materials. This review covers recent progress in materials, devices, and overcoming challenges for commercialization.

Keywords:
oxide CMOSoxide diodesp-type oxidesthin-film transistorstransparent electronics

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Electronics Engineering

Background:

  • Transparent p-type oxide semiconductors are essential for applications requiring transparency and high performance.
  • These materials enable transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics.

Purpose of the Study:

  • To review recent advancements in p-type oxide semiconductor materials and devices.
  • To discuss strategies for improving material properties and device performance.
  • To highlight challenges and opportunities for commercializing these semiconductors.

Main Methods:

  • Review of literature on ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides.
  • Discussion of crystal and electronic structures, valence-band dispersion, and mobility enhancement.
  • Analysis of strategies for reducing defects, off-state current, and material instability.

Main Results:

  • Promising progress has been made in the performance of various p-type oxide-based devices.
  • Innovative approaches for fabricating transparent complementary metal-oxide-semiconductor (CMOS) devices have shown good inverter gains.
  • Despite advancements, p-type oxides still exhibit lower performance compared to commercialized n-type counterparts.

Conclusions:

  • Further research is needed to bridge the performance gap between p-type and n-type oxide semiconductors.
  • Overcoming material instability and interfacial defects is key to commercial success.
  • Continued development holds potential for next-generation transparent electronic applications.