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Gateable Skyrmion Transport via Field-induced Potential Barrier Modulation
Hiu Tung Fook1, Wei Liang Gan1, Wen Siang Lew1
1School of Physical &Mathematical Sciences, Division of Physics and Applied Physics, Nanyang Technological University, 21 Nanyang Link, Singapore 637371.
Scientific Reports
|February 18, 2016
Summary
We discovered skyrmions can be depinned more easily when driven against pinning sites, enabling skyrmion diode creation. This finding is key for low-power electronic devices.
Area of Science:
- Spintronics
- Condensed Matter Physics
Background:
- Skyrmions are particle-like magnetic structures with potential for data storage.
- Understanding skyrmion dynamics is crucial for developing novel electronic devices.
Purpose of the Study:
- To investigate the influence of pinning potentials on current-driven skyrmion dynamics.
- To demonstrate skyrmion gating via magnetic or electric fields.
- To explore the creation of a skyrmion diode.
Main Methods:
- Simulating current-driven skyrmion motion in the presence of pinning potentials.
- Analyzing the effect of driving force orientation on skyrmion depinning.
- Investigating skyrmion compression using spin transfer torque and external fields.
Main Results:
- Skyrmions are depinned more effectively when driven against pinning sites.
- A skyrmion diode can be created by exploiting the Magnus force and depinning characteristics.
- Skyrmion compression, leading to reduced pinning, can be induced by magnetic or electric fields.
Conclusions:
- Skyrmion dynamics can be manipulated by controlling their interaction with pinning potentials.
- The findings pave the way for low-power spintronic devices, including transistors and memory.
- Field-controlled skyrmion compression offers a route to efficient device operation.
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