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Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and

Shengxiang Jiang1, Yulong Feng1, Zhizhong Chen1

  • 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.

Scientific Reports
|February 24, 2016
PubMed
Summary

Researchers improved green light-emitting diode (LED) light extraction efficiency by 116% using an anodic aluminum oxide (AAO) patterned sapphire substrate as a nanoimprint lithography stamp. This novel patterning enhances light extraction by optimizing guided mode extraction.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Planar green light-emitting diodes (LEDs) suffer from limited light extraction efficiency (LEE).
  • Nanostructuring surfaces offers a potential pathway to enhance light outcoupling in LEDs.

Purpose of the Study:

  • To investigate the use of anodic aluminum oxide (AAO) patterned sapphire substrates for enhancing LED LEE.
  • To analyze the impact of AAO nanopattern features on light extraction mechanisms.

Main Methods:

  • Fabrication of an AAO patterned sapphire substrate with specific lattice constant, pore dimension, and height.
  • Utilizing the AAO substrate as a nanoimprint lithography (NIL) stamp to pattern green LEDs.
  • Characterization of the patterned LEDs using angular resolution photoluminescence (ARPL).

Main Results:

  • Achieved a 116% improvement in LEE for the AAO patterned LED compared to planar LEDs.
  • Observed uniform broad protrusions and sharp lobes in ARPL measurements, indicating altered light emission patterns.
  • Demonstrated enhanced extraction of guided modes from the LED device.

Conclusions:

  • AAO patterned sapphire substrates are effective stamps for enhancing LED LEE via nanoimprint lithography.
  • The specific characteristics of the AAO nanopattern, including lattice constant fluctuations and domain orientation, are crucial for improved light extraction.
  • This technique offers a viable method for boosting the performance of optoelectronic devices.