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Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic
Renato B dos Santos1,2, F de Brito Mota1, R Rivelino1
1Instituto de Física, Universidade Federal da Bahia, 40210-340 Salvador, Bahia, Brazil.
Abstract:
Graphite-like hexagonal AlN (h-AlN) multilayers have been experimentally manifested and theoretically modeled. The development of any functional electronics applications of h-AlN would most certainly require its integration with other layered materials, particularly graphene. Here, by employing vdW-corrected density functional theory calculations, we investigate structure, interaction energy, and electronic properties of van der Waals stacking sequences of few-layer h-AlN with graphene. We find that the presence of a template such as graphene induces enough interlayer charge separation in h-AlN, favoring a graphite-like stacking formation. We also find that the interface dipole, calculated per unit cell of the stacks, tends to increase with the number of stacked layers of h-AlN and graphene.
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