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Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter
Chee-Keong Tan1, Damir Borovac1, Wei Sun1
1Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA.
Scientific Reports
|February 25, 2016
Summary
Dilute-arsenide Aluminum Nitride Arsenide (AlNAs) alloys exhibit a significant reduction in band gap, ideal for deep ultraviolet (UV) light emitters. This research highlights their potential for transverse electric (TE)-polarized emission.
Area of Science:
- Materials Science
- Solid State Physics
- Quantum Chemistry
Background:
- Aluminum Nitride (AlN) is a wide bandgap semiconductor with applications in deep UV optoelectronics.
- Tuning the bandgap of AlN is crucial for achieving desired emission wavelengths.
Purpose of the Study:
- Investigate the band structure of dilute-arsenide AlNAs alloys.
- Determine the impact of arsenic (As) incorporation on the electronic and optical properties.
- Explore the potential of AlNAs for deep UV light-emitting applications.
Main Methods:
- First-Principle Density Functional Theory (DFT) calculations were employed.
- Systematic study of AlNAs alloys with As compositions from 0% to 12.5%.
Main Results:
- A remarkable reduction in energy band gap from 6.19 eV to 3.87 eV was observed with increasing As content.
- A large bowing parameter of 30.5 eV ± 0.5 eV was determined for AlNAs.
- A crossover between crystal field split-off (CH) and heavy hole (HH) bands occurred at approximately 1.5% As content.
Conclusions:
- Dilute-As AlNAs alloys cover the deep UV spectral regime.
- The band structure modifications suggest the possibility of dominant transverse electric (TE)-polarized emission.
- AlNAs alloys show promise as novel active region materials for TE-polarized III-Nitride-based deep UV light emitters.
