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Graphene quantum dots as a highly efficient solution-processed charge trapping medium for organic nano-floating gate

Yongsung Ji1, Juhan Kim, An-Na Cha

  • 1Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do 565-905, Korea.

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Solution-processible graphene quantum dots (GQDs) offer a novel charge trapping medium for high-performance organic nano-floating gate memory (NFGM). These GQDs enable significantly higher charge storage density, advancing NFGM device capabilities.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Organic Electronics

Background:

  • High-performance organic nano-floating gate memory (NFGM) requires efficient solution-processible charge trapping layers.
  • Increasing stored charge density in nanoscale layers remains a significant challenge for organic memory devices.

Purpose of the Study:

  • To develop and evaluate solution-processible graphene quantum dots (GQDs) as a highly efficient charge trapping medium for organic NFGM applications.
  • To investigate the charge storage capacity and performance characteristics of NFGM devices utilizing GQDs.

Main Methods:

  • Graphene quantum dots (GQDs) were synthesized using a modified thermal plasma jet method.
  • X-ray photoelectron spectroscopy (XPS) was employed to confirm the composition and minimal oxidation of the GQDs.
  • NFGM devices were fabricated using the GQDs as the charge trapping layer, and their electrical characteristics were measured.

Main Results:

  • The synthesized GQDs, primarily carbon with minimal oxidation, possess multiple energy levels suitable for charge trapping.
  • NFGM devices demonstrated excellent performance: an on/off current ratio > 10^6, retention time of 10^4 s, and endurance > 100 cycles.
  • The GQD layer achieved a high charge storage density of approximately 7.2 × 10^12 cm^-2, surpassing other solution-processible nanomaterials.

Conclusions:

  • Solution-processible GQDs are a promising, highly efficient nanoscale charge trapping material for advanced organic NFGM devices.
  • The high charge storage density achieved by GQDs significantly enhances the performance and potential of organic memory technologies.