Ultra-low temperature silicon nitride photonic integration platform

High-quality SiNx films with controllable low stress and low optical loss are deposited at ultra-low temperature (75 °C) using inductively coupled plasma chemical vapor deposition (ICP-CVD). Two kinds of integrated photonic structures have been demonstrated that exemplify its viability as a photonic integration platform. A microcavity consists of two distributed Bragg reflectors (DBR) formed by alternating a total of 49 layers of SiNx and SiO2 with a total thickness of about 11.5 μm is grown without any cracks, confirming the excellent stress control in the process. Microring resonators are also fabricated in as-deposited planar SiNx waveguide layer using electron-beam lithography (EBL) and plasma etching. Average waveguide loss of 0.79 ± 0.22 dB/cm has been achieved in the range of 1550-1600 nm for ring radii larger than 40 μm. The ultra-low temperature grown SiNx with properties of low loss and low stress is therefore a promising photonic integration platform for various photonic integration applications.