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Updated: Mar 25, 2026

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Atomic-Scale Quantitative Analysis of Lattice Distortions at Interfaces of Two-Dimensionally Sr-Doped La2CuO4
Yi Wang1, Federico Baiutti1, Giuliano Gregori1
1Max Planck Institute for Solid State Research , Heisenbergstrasse 1, 70569 Stuttgart, Germany.
Abstract:
Using spherical aberration corrected high-resolution and analytical scanning transmission electron microscopy, we have quantitatively studied the lattice distortion and the redistribution of charges in two-dimensionally strontium (Sr)-doped La2CuO4 superlattices, in which single LaO planes are periodically replaced by SrO planes. As shown previously, such structures show Tc up to 35 K as a consequence of local charge accumulation on both sides of the nominal SrO planes position. This is caused by two distinct mechanisms of doping: heterogeneous doping at the downward side of the interface (space-charge effect) and "classical" homogeneous doping at the upward side. The comparative chemical and atomic-structural analyses reveal an interrelation between local CuO6 octahedron distortions, hole spatial distribution, and chemical composition. In particular we observe an anomalous expansion of the apical oxygen-oxygen distance in the heterogeneously doped (space-charge) region, and a substantial shrinkage of the apical oxygen-oxygen distance in the homogeneously doped region. Such findings are interpreted in terms of different Jahn-Teller effects occurring at the two interface sides (downward and upward).
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