Related Experiment Video
Updated: Mar 25, 2026
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar
Yuwen Jiang1, Shufan Huang2, Zhichao Zhu3
1State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Collaborative Innovative Center of Advanced Microstructures, Department of Physics, Fudan University, Shanghai, 200433, Peoples' Republic of China. yuwenjiang13@fudan.edu.cn.
Abstract:
Large-area ordered GeSi multi-quantum-well nanopillar array (MQW-NPA) samples with different nanopillar lateral sizes (270, 120, and 70 nm) are fabricated by a cost-effective and scalable dry-etching process in combination with nanosphere lithography technique. A significant enhancement in photoluminescence (PL) intensity has been observed in the GeSi MQW-NPA samples compared with the as-grown GeSi MQW one. Nanopillar samples with different lateral sizes show different enhancements in PL intensity. The enhancements are analyzed quantitatively and attributed to three factors. One is the antireflection of the nanopillar structures. Another is an enhanced extraction in nanopillar arrays at the emission wavelength. Thirdly, the GeSi quantum wells in close proximity to the substrates would have more contribution to the PL than before etching. Our results show that all the three factors should be taken into account in designing and fabricating surface microstructures of GeSi MQW materials in order to improve their optical properties.
