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Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy
Alex Summerfield1, Andrew Davies1,2, Tin S Cheng1
1School of Physics &Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK.
Scientific Reports
|March 2, 2016
Summary
High-temperature molecular beam epitaxy of graphene on hexagonal boron nitride creates large, strained domains. This method allows for controlled strain generation and modification in graphene, offering new possibilities for material science.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Epitaxial growth of 2D materials is crucial for advanced electronic applications.
- Controlling strain in graphene layers influences their electronic and mechanical properties.
- Hexagonal boron nitride (hBN) serves as a suitable substrate for high-quality graphene growth.
Purpose of the Study:
- To investigate the growth of continuous graphene domains on hexagonal boron nitride (hBN) using high-temperature molecular beam epitaxy.
- To analyze the strain and defect formation in graphene grown on hBN.
- To demonstrate a novel method for generating and modifying strain in epitaxial graphene.
Main Methods:
- High-temperature molecular beam epitaxy (MBE) for graphene growth on hBN.
- Moiré pattern analysis to determine strain and periodicity.
- Raman spectroscopy to confirm strain-induced peak shifts.
- Local probe modification for crack formation and strain manipulation.
Main Results:
- Continuous graphene domains up to 20 μm were achieved on hBN.
- Large moiré periodicities (up to 30 nm) indicate significant strain.
- Topological defects and cracks were observed, facilitating strain relaxation and anisotropic strain fields.
- Raman spectra showed split and shifted G and 2D peaks, confirming strain presence.
- Local probe manipulation successfully induced cracks and modified strain.
Conclusions:
- High-temperature MBE on hBN is an effective approach for growing large-scale epitaxial graphene.
- The growth process naturally leads to strain and defect formation, which can be further controlled.
- This technique offers a new pathway for engineering strain in graphene for tailored electronic properties.
