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A 500 A device characterizer utilizing a pulsed-linear amplifier.

Shelby Lacouture1, Stephen Bayne1

  • 1Department of Electrical Engineering, Texas Tech University, 1012 Boston Ave., Lubbock, Texas 79409, USA.

The Review of Scientific Instruments
|March 3, 2016
PubMed
Summary
This summary is machine-generated.

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Researchers developed a dedicated 10V, 500A curve tracer for characterizing high-power semiconductor devices. This pulsed power system accurately measures quasi-static DC characteristics without damaging the devices.

Area of Science:

  • Electrical Engineering
  • Materials Science
  • Semiconductor Physics

Background:

  • Modern power semiconductor devices handle increasing voltage and current levels.
  • Existing characterization equipment struggles to keep pace with these advancements, particularly for quasi-static IV curves.
  • Researchers often resort to ad hoc solutions for device characterization.

Purpose of the Study:

  • To design and construct a dedicated curve tracer for high-power semiconductor devices.
  • To enable accurate measurement of quasi-static DC characteristics.
  • To overcome limitations of existing characterization equipment.

Main Methods:

  • A dedicated 10V, 500A curve tracer was designed and built.
  • The system utilizes a pulsed power approach with a high-power linear amplifier.

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  • Actively shaped square voltage pulses are employed for characterization.
  • Simultaneous recording of voltage and current waveforms using high-speed ADCs.
  • Averaging of waveforms to reconstruct quasi-static IV curves.

    • Main Results:

    • A physically small, pulsed power system was successfully constructed.
    • The system accurately obtains quasi-static DC characteristics of high-power semiconductor devices.
    • The method ensures accurate measurements without causing device damage.
    • Reconstructed IV graphs are generated from averaged pulse data.

    Conclusions:

    • The developed curve tracer effectively addresses the limitations of existing equipment for high-power semiconductor characterization.
    • This dedicated system provides a reliable and non-destructive method for obtaining quasi-static IV curves.
    • The pulsed power approach facilitates accurate characterization of state-of-the-art semiconductor devices.