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Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

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Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons.

Yung-Chi Yao¹, Jung-Min Hwang^1,2, Zu-Po Yang³

¹Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Rd., Taipei, 116, Taiwan.

Scientific Reports

|March 4, 2016

Summary

Researchers enhanced light output in Gallium Nitride (GaN)-based vertical-light emitting diodes (VLEDs) by coupling localized surface plasmon (LSP) resonance with waveguide modes. This boosts external quantum efficiency by creating new light escape channels.

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Area of Science:

Optoelectronics
Materials Science

Background:

Gallium Nitride (GaN)-based vertical-light emitting diodes (VLEDs) are crucial for lighting and displays.
Enhancing their external quantum efficiency (EQE) is key to improving performance.
Light extraction efficiency is often limited by internal wave-guiding effects.

Purpose of the Study:

To investigate the enhancement of EQE in GaN-based VLEDs.
To explore the coupling of localized surface plasmon (LSP) resonance with wave-guided modes.
To improve light-output power and efficiency through novel nanostructure integration.

Main Methods:

Experimental fabrication of VLEDs with hydrothermally synthesized ZnO nanorods.
Drop-casting of Silver nanoparticles (Ag NPs) onto the ZnO nanorod layer.
Utilizing the finite-difference time-domain (FDTD) method for theoretical analysis.
Measuring absorption spectra and electric field distributions.

Main Results:

Observed enhancement in light-output power and EQE.
The enhancement remained stable across varying injection currents.
FDTD simulations confirmed the coupling mechanism between LSP and wave-guided modes.
Identified the creation of an additional light escape channel.

Conclusions:

Coupling LSP resonance with wave-guided modes effectively enhances VLED performance.
Ag NPs on ZnO nanorods provide an efficient light scattering pathway.
This method offers a viable strategy for boosting EQE in GaN-based VLEDs.