Related Experiment Video
Updated: Mar 24, 2026

10:17
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
12.1K
Stopped Light at High Storage Efficiency in a Pr^{3+}:Y_{2}SiO_{5} Crystal
Daniel Schraft1, Marcel Hain1, Nikolaus Lorenz1
1Institut für Angewandte Physik, Technische Universität Darmstadt, Hochschulstr. 6, 64289 Darmstadt, Germany.
Physical Review Letters
|March 5, 2016
Summary
Researchers achieved high efficiency (76.3%) for storing and retrieving light pulses using electromagnetically induced transparency (EIT) in a Pr^{3+}:Y_{2}SiO_{5} crystal, demonstrating a promising solid-state memory.
Area of Science:
- Quantum optics
- Solid-state physics
- Materials science
Background:
- Electromagnetically induced transparency (EIT) enables novel light-matter interactions.
- Solid-state systems offer robust platforms for quantum information processing.
- Pr^{3+}:Y_{2}SiO_{5} is a suitable medium for optical memory applications.
Purpose of the Study:
- To demonstrate efficient storage and retrieval of light pulses using EIT in a Pr^{3+}:Y_{2}SiO_{5} crystal.
- To investigate the impact of optical depth and EIT parameters on storage efficiency.
- To validate EIT-driven solid-state memory theory.
Main Methods:
- Utilized a ring-type multipass configuration to enhance optical depth (OD) to ≈96.
- Optimized conditions for EIT to maximize light storage.
- Performed systematic measurements of storage efficiency against OD, Rabi frequency, and pulse duration.
Main Results:
- Achieved a light storage efficiency of (76.3±3.5)%.
- Demonstrated a significant increase in optical depth by a factor of 16.
- Systematic measurements confirmed theoretical predictions for EIT-driven memory.
Conclusions:
- Efficient light storage and retrieval in Pr^{3+}:Y_{2}SiO_{5} via EIT is feasible.
- The ring-type multipass configuration effectively enhances optical depth for improved performance.
- The experimental results strongly support the theoretical framework of EIT-based solid-state quantum memory.
More Related Videos
Related Concept Videos
Photoluminescence: Applications
1.2K
Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
1.2K
MOSFET: Enhancement Mode
1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
Variables Affecting Phosphorescence and Fluorescence
1.9K
Fluorescence and phosphorescence are essential phenomena in fields like analytical chemistry, biological imaging, and materials science, where they detect molecular properties and visualize cellular structures. Understanding the variables that influence these luminescent behaviors is crucial for maximizing accuracy and efficiency in their applications. These variables can broadly be grouped into chemical structure, solvent properties, and external conditions, each playing a distinct role in...
1.9K

