A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation

Area of Science:

• Materials Science
• Nanotechnology
• Surface Chemistry

Background:

• Area-selective atomic layer deposition (AS-ALD) is crucial for advanced nanoelectronics, enabling precise pattern placement and continued dimensional scaling.
• Current AS-ALD methods face challenges in achieving selective deposition on complex three-dimensional (3D) nanostructures.

Purpose of the Study:

• To develop a novel strategy for achieving topographic selectivity in AS-ALD on 3D nanostructures.
• To demonstrate the ability to selectively deposit materials on vertical surfaces while inhibiting deposition on horizontal surfaces.

Main Methods:

• Utilizing ion implantation of fluorocarbons (CFx) to create an ultrathin hydrophobic interfacial layer.
• Applying this hydrophobic layer to retard nucleation during atomic layer deposition (ALD).
• Demonstrating the process for Platinum (Pt) ALD on blanket, 2D patterned, and 3D nanostructured substrates.

Main Results:

• Successfully achieved area-selective deposition on 3D nanostructures with topographic control.
• Demonstrated selective anisotropic deposition, inhibiting Pt ALD on deactivated horizontal regions while coating vertical surfaces.
• Showcased the potential for metal oxide ALD, though further optimization is needed.

Conclusions:

• The developed method provides a practical approach for area-selective coating of surfaces in various 3D nanostructures based on topographical orientation.
• This technique advances the fabrication of next-generation nanoelectronic devices requiring precise material placement.