Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

1.8K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.8K
Carrier Transport01:21

Carrier Transport

1.1K
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
1.1K
P-N junction01:11

P-N junction

1.6K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.6K
Diffusion01:12

Diffusion

229.5K
Diffusion is the passive movement of substances down their concentration gradients—requiring no expenditure of cellular energy. Substances, such as molecules or ions, diffuse from an area of high concentration to an area of low concentration in the cytosol or across membranes. Eventually, the concentration will even out, with the substance moving randomly but causing no net change in concentration. Such a state is called dynamic equilibrium, which is essential for maintaining overall...
229.5K
Diffusion01:21

Diffusion

7.2K
Diffusion is a type of passive transport. In passive transport, a substance tends to move from an area of high concentration to an area of low concentration until the concentration is equal across the space. For example, take the diffusion of substances through the air. When someone opens a perfume bottle in a room filled with people, the perfume is at its highest concentration in the bottle and is at its lowest at the edges of the room. The perfume vapor will diffuse, or spread away, from the...
7.2K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Unraveling ShuA detergent-induced colloidal behavior in solution: A comprehensive SEC-MALS, SAXS, and SANS study.

Protein science : a publication of the Protein Society·2025
Same author

Substance-Gain Extrusion Technique (SGET) in Combination With BOPT-Technique Description.

Journal of esthetic and restorative dentistry : official publication of the American Academy of Esthetic Dentistry ... [et al.]·2025
Same author

Sitosterol and glucosylceramide cooperative transversal and lateral uneven distribution in plant membranes.

Scientific reports·2021
Same author

Editorial: Membrane Structure and Dynamics Studied With Neutron Scattering.

Frontiers in chemistry·2021
Same author

Effect of benzocaine and propranolol on phospholipid-based bilayers.

Physical chemistry chemical physics : PCCP·2017
Same author

A versatile UHV transport and measurement chamber for neutron reflectometry under UHV conditions.

The Review of scientific instruments·2017

Related Experiment Video

Updated: Mar 24, 2026

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
11:34

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Published on: October 6, 2020

6.0K

Erratum: Self-Diffusion in Amorphous Silicon [Phys. Rev. Lett. 116, 025901 (2016)].

F Strauß, L Dörrer, T Geue

    Physical Review Letters
    |March 12, 2016
    PubMed
    Summary
    This summary is machine-generated.

    This study corrects a previously published article, ensuring the accuracy of scientific records. It provides the correct Digital Object Identifier (DOI) for enhanced discoverability and citation integrity.

    More Related Videos

    Analyzing Melts and Fluids from Ab Initio Molecular Dynamics Simulations with the UMD Package
    06:37

    Analyzing Melts and Fluids from Ab Initio Molecular Dynamics Simulations with the UMD Package

    Published on: September 17, 2021

    5.2K
    Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
    10:32

    Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

    Published on: January 9, 2014

    10.3K

    Related Experiment Videos

    Last Updated: Mar 24, 2026

    Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
    11:34

    Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

    Published on: October 6, 2020

    6.0K
    Analyzing Melts and Fluids from Ab Initio Molecular Dynamics Simulations with the UMD Package
    06:37

    Analyzing Melts and Fluids from Ab Initio Molecular Dynamics Simulations with the UMD Package

    Published on: September 17, 2021

    5.2K
    Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
    10:32

    Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

    Published on: January 9, 2014

    10.3K

    Area of Science:

    • Bibliometrics
    • Scientific Publishing
    • Scholarly Communication

    Context:

    • Accurate citation is crucial for scientific integrity.
    • Digital Object Identifiers (DOIs) ensure persistent and reliable access to research.
    • Errors in DOIs can hinder research tracking and impact assessment.

    Purpose:

    • To correct an erroneous Digital Object Identifier (DOI) in a published article.
    • To ensure the accurate linkage of the scientific record.
    • To improve the discoverability and citation of the research.

    Summary:

    • This communication provides a correction to the Digital Object Identifier (DOI) for an article previously published in Physical Review Letters.
    • The correct DOI is now officially recorded, rectifying a bibliographic error.

    Impact:

    • Ensures the integrity of the scientific literature.
    • Facilitates accurate citation and retrieval of the corrected article.
    • Supports reliable bibliometric analysis and research impact tracking.