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Interface Engineering to Create a Strong Spin Filter Contact to Silicon.

C Caspers1,2, A Gloskovskii3, M Gorgoi4

  • 1Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich, 52425 Jülich, Germany.

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|March 16, 2016
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Summary
This summary is machine-generated.

Researchers developed a method to integrate ferromagnetic Europium Oxide (EuO) directly onto silicon, overcoming reactivity issues. This enables advanced spin filter functionality for silicon nanotechnology applications.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Spintronics

Background:

  • Integrating ferromagnetic Europium Oxide (EuO) on silicon is key for spin filter functionality in silicon nanotechnology.
  • Chemical reactivity between EuO and silicon leads to interface contamination (Eu silicides, Si oxides), hindering integration.

Purpose of the Study:

  • To present a solution for chemically clean, heteroepitaxial integration of ferromagnetic EuO on silicon (001).
  • To enable the creation of a strong spin filter contact to silicon.

Main Methods:

  • In situ hydrogen-Si (001) passivation.
  • Application of oxygen-protective Europium monolayers.
  • Hard X-ray photoemission spectroscopy for chemical depth profiling.

Main Results:

  • Minimized Eu silicide and Si oxide formation to the sub-monolayer regime.
  • Achieved chemically clean, heteroepitaxial, and ferromagnetic EuO/Si (001) interfaces.
  • Demonstrated successful interface engineering without additional buffer layers.

Conclusions:

  • The developed passivation techniques effectively solve the EuO/Si interface reactivity problem.
  • This integration paves the way for advanced spintronic devices utilizing silicon nanotechnology.