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Confocal Fluorescence Microscopy

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Updated: Mar 24, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Low Threshold Quantum Dot Lasers.

Veena Hariharan Iyer¹, Rekha Mahadevu¹, Anshu Pandey¹

¹Solid State and Structural Chemistry Unit, Indian Institute of Science , Bangalore 560012, India.

The Journal of Physical Chemistry Letters

|March 16, 2016

Summary

This summary is machine-generated.

Researchers developed new semiconductor quantum dots for lasers. These quantum dots achieve lasing with low continuous wave light, overcoming previous limitations and enabling new applications.

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Last Updated: Mar 24, 2026

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Published on: October 13, 2017

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Area of Science:

Materials Science
Optics
Nanotechnology

Background:

Semiconductor quantum dots are advanced light-emitting materials.
Their use as laser gain media is hindered by high excitation energy requirements.
Conventional quantum dots need intense pulsed lasers for stimulated emission.

Purpose of the Study:

To engineer quantum dots capable of lasing under low-power continuous wave illumination.
To overcome the limitations of existing quantum dot laser materials.
To enable efficient light conversion from diffuse sources.

Main Methods:

Development of a novel class of semiconductor quantum dots.
Characterization of optical absorption and emission properties.
Fabrication and testing of quantum dot lasers under continuous wave excitation.

Main Results:

Achieved stimulated emission and lasing under low continuous wave light levels.
Observed lasing thresholds as low as 74 mW/cm(2).
Demonstrated strong optical absorption in the developed quantum dots.

Conclusions:

The new quantum dots exhibit efficient gain under continuous wave light.
Low lasing thresholds make these materials suitable for practical laser applications.
Potential for converting diffuse light sources into laser beams.