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Photoconductive terahertz generation from textured semiconductor materials.

Christopher M Collier1, Trevor J Stirling1, Ilija R Hristovski1

  • 1Integrated Optics Laboratory, The University of British Columbia, Kelowna, BC, V1V 1V7, Canada.

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Textured indium phosphide (InP) materials enhance photoconductive (PC) terahertz (THz) emitters by reducing photocurrents and Joule heating, preventing thermal runaway and device breakdown.

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Solid State Physics

Background:

  • Photoconductive (PC) terahertz (THz) emitters face limitations due to ohmic loss and Joule heating, potentially causing thermal runaway and device failure.
  • Indium phosphide (InP) is a key material for THz emitter fabrication, but its performance can be degraded by thermal effects.

Purpose of the Study:

  • To investigate the use of textured InP materials for developing advanced PC THz emitters.
  • To mitigate ohmic loss and Joule heating in PC THz emitters through material texturization.

Main Methods:

  • Fabrication and characterization of PC THz emitters using fine- and coarse-textured InP materials, with non-textured InP as a baseline.
  • Utilized ultrafast pump-probe spectroscopy to measure charge-carrier lifetimes.
  • Employed THz setups to analyze THz response and photocurrent consumption.

Main Results:

  • Textured InP materials exhibit enhanced surface recombination and reduced charge-carrier lifetimes.
  • Residual photocurrents and subsequent Joule heating were significantly diminished in textured InP emitters.
  • Similar temporal and spectral characteristics of THz waveform generation were maintained.

Conclusions:

  • Texturization of InP is an effective strategy to reduce Joule heating in PC THz emitters.
  • The developed textured InP PC THz emitters demonstrate improved thermal management and device reliability.
  • This approach offers a pathway to overcome thermal limitations in high-power THz generation.