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Related Concept Videos

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Carrier Transport

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The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Metal-Semiconductor Junctions

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Related Experiment Video

Updated: Mar 24, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Spin transport in p-type germanium.

F Rortais1, S Oyarzún, F Bottegoni

  • 1Université Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble, France. CEA, INAC-SPINTEC, F-38000 Grenoble, France. CNRS, INAC-SPINTEC, F-38000 Grenoble, France.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|March 19, 2016
PubMed
Summary
This summary is machine-generated.

We explored spin transport in p-doped germanium (Ge-p) using electrical spin injection and spin pumping. Results confirm successful spin accumulation and provide insights into spin-dependent scattering mechanisms in germanium.

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Area of Science:

  • Solid State Physics
  • Materials Science
  • Spintronics

Background:

  • Germanium (Ge) is a promising semiconductor for spintronic applications.
  • Understanding spin transport properties in Ge is crucial for developing spin-based devices.
  • Previous studies have indicated potential for spin manipulation in Ge, but experimental validation is ongoing.

Purpose of the Study:

  • To investigate spin transport properties in p-doped germanium (Ge-p).
  • To demonstrate and quantify spin accumulation in Ge using electrical and optical methods.
  • To elucidate the role of scattering mechanisms in spin dynamics within Ge.

Main Methods:

  • Low-temperature magnetoresistance measurements.
  • Electrical spin injection using three-terminal Hanle effect measurements.
  • Spin pumping and inverse spin Hall effect (ISHE) measurements.
  • Analysis of weak antilocalization phenomena.

Main Results:

  • Consistent spin lifetimes (≈1 ps) were obtained from weak antilocalization and Hanle effect measurements in the germanium valence band (2-20 K).
  • Successful spin accumulation in Ge was demonstrated through combined electrical spin injection and spin pumping-ISHE techniques.
  • The spin Hall angle θ(SHE) in Ge-p was estimated to be (6-7) x 10(-4) at room temperature.
  • Ionized impurities were identified as playing a critical role in spin-dependent scattering.

Conclusions:

  • The study successfully demonstrates spin accumulation in p-doped germanium, a key step for spintronic applications.
  • Experimental results align with theoretical predictions and previous optical measurements for spin lifetime.
  • The findings highlight the significance of ionized impurities in spin-dependent scattering, offering insights for material engineering.