Coulomb blockade in monolayer MoS2 single electron transistor

Area of Science:

• Condensed Matter Physics
• Materials Science
• Nanotechnology

Background:

• Understanding intrinsic electronic properties of molybdenum disulfide (MoS2) is crucial.
• Electron transport studies on monolayer MoS2 are hindered by large metal/semiconductor junction barriers, especially at low temperatures.

Purpose of the Study:

• To fabricate and characterize a high-performance monolayer MoS2 single-electron transistor.
• To investigate Coulomb blockade phenomena and electron transport at low temperatures in MoS2.

Main Methods:

• Fabrication of monolayer MoS2 single-electron transistors.
• Utilized low work function zinc metal contacts.
• Employed rapid thermal annealing.
• Conducted low-temperature transport measurements, including Coulomb blockade and temperature-dependent conductance oscillations.

Main Results:

• Achieved high-performance monolayer MoS2 single-electron transistors.
• Observed Coulomb blockade at low temperatures, attributed to single-electron tunneling.
• Investigated the nature of Coulomb blockade through conductance oscillation measurements.

Conclusions:

• Successfully fabricated and characterized a monolayer MoS2 single-electron transistor.
• Demonstrated effective methods to overcome low-temperature transport challenges in MoS2.
• Results pave the way for exploring novel quantum transport phenomena in 2D atomic layer crystals.