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P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced

Kexiong Zhang1, Masatomo Sumiya2, Meiyong Liao2

  • 1International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.

Scientific Reports
|March 30, 2016
PubMed

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