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Updated: Mar 23, 2026

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

A Nanowire-Based Plasmonic Quantum Dot Laser.

Jinfa Ho¹, Jun Tatebayashi¹, Sylvain Sergent¹

¹Institute for Nano Quantum Information Electronics and ‡Institute of Industrial Science, The University of Tokyo , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan.

|April 1, 2016

Summary

This study introduces the first quantum dot-plasmonic laser, enabling miniaturized nanowire lasers below the diffraction limit. This breakthrough offers improved performance and high-temperature stability for nanophotonic applications.

Keywords:

Nanowire near-infrared plasmonic laser quantum dots temperature stability

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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

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Last Updated: Mar 23, 2026

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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Area of Science:

Optics and Photonics
Materials Science
Nanotechnology

Background:

Quantum dots (QDs) offer superior laser performance due to carrier confinement and a delta-function density of states.
Existing quantum dot lasers are limited by diffraction-limited photonic cavities, hindering miniaturization for nanophotonic integration.

Purpose of the Study:

To develop the first quantum dot-based plasmonic laser for sub-diffraction-limit miniaturization.
To integrate quantum dots with plasmonic cavities for enhanced laser performance and stability.

Main Methods:

Fabrication of Metal Organic Chemical Vapor Deposition (MOCVD) grown GaAs-AlGaAs core-shell nanowires with InGaAs quantum dot stacks.
Integration of quantum dot nanowires onto a silver film to form a plasmonic cavity.
Characterization of lasing properties, including threshold pump fluence and temperature stability.

Main Results:

Demonstrated lasing from single nanowires utilizing InGaAs quantum dot emission into a low-loss plasmonic mode.
Achieved low lasing threshold pump fluences as low as ~120 μJ/cm² at 7 K.
Observed lasing up to 125 K, demonstrating high characteristic temperature and temperature stability.

Conclusions:

Plasmonic integration enables quantum dot lasers with cross-sectional areas below the photonic mode cutoff.
This approach facilitates the realization of high-performance, miniaturized quantum dot lasers for nanophotonic-electronic integration.
The demonstrated temperature stability highlights the potential of QD-plasmonic lasers for practical applications.